(China (Mainland))
Product Summary
The 2N6517TA is a NPN Epitaxial Silicon Transistor.
Parametrics
2N6517TA Parametrics:
Packaging
Tape & Box (TB)
Transistor Type
NPN
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
350V
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 50mA, 10V
Power - Max
625mW
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Dynamic Catalog
NPN Transistors
Other Names
2N6517TA-ND
2N6517TATB
Features
2N6517TA Features:
? High Voltage Transistor
? Collector Dissipation: PC(max) = 625mW
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 2N6517TA |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
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2N6517TA_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
Negotiable |
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