(China (Mainland))
Product Summary
The 2SA1020-Y is a high-performance TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process).
Parametrics
2SA1020-Y Parametrics:
Packaging
Tape & Box (TB)
Transistor Type
PNP
Current - Collector (Ic) (Max)
2A
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 1A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA, 2V
Power - Max
900mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
LSTM
Features
2SA1020-Y Features:
? Low Collector saturation voltage: VCE (sat) = ?0.5 V (max) (IC = ?1 A)
? High collector power dissipation: PC = 900 mW
? High-speed switching: tstg = 1.0 μs (typ.)
? Complementary to 2SC2655
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SA1020-Y(TE6,F,M) |
Toshiba |
Transistors Bipolar (BJT) PNP -50V -2A 900mW |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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2SA1006 |
Other |
|
Data Sheet |
Negotiable |
|
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2SA1006A |
Other |
|
Data Sheet |
Negotiable |
|
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2SA1006B |
Other |
|
Data Sheet |
Negotiable |
|
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2SA1008 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SA1009 |
Other |
|
Data Sheet |
Negotiable |
|
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2SA1009A |
Other |
|
Data Sheet |
Negotiable |
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