Product Summary

The BD139G is a high-performance Plastic Medium-Power Silicon NPN Transistor.

Parametrics

BD139G Parametrics:

Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 1.5A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V
Power - Max 1.25W
Frequency - Transition -
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO225AA
Dynamic Catalog NPN Transistors
Other Names BD139GOS

Features

BD139G Features:

? High DC Current Gain
? The Device is Pb?Free, Halogen Free/BFR Free and is RoHS Compliant*

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BD139G
BD139G

ON Semiconductor

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Data Sheet

0-1: $0.29
1-25: $0.23
25-100: $0.20
100-500: $0.17
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
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Data Sheet

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Data Sheet

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STMicroelectronics

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Data Sheet

0-3000: $0.17
3000-5000: $0.16
5000-10000: $0.16
BD135,137,139
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Data Sheet

Negotiable 
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Data Sheet

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Data Sheet

0-1: $0.20
1-25: $0.17
25-100: $0.16
100-250: $0.10