Product Summary
The BD139G is a high-performance Plastic Medium-Power Silicon NPN Transistor.
Parametrics
BD139G Parametrics:
Packaging
Bulk
Transistor Type
NPN
Current - Collector (Ic) (Max)
1.5A
Voltage - Collector Emitter Breakdown (Max)
80V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 2V
Power - Max
1.25W
Frequency - Transition
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO225AA
Dynamic Catalog
NPN Transistors
Other Names
BD139GOS
Features
BD139G Features:
? High DC Current Gain
? The Device is Pb?Free, Halogen Free/BFR Free and is RoHS Compliant*
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BD139G |
ON Semiconductor |
Transistors Bipolar (BJT) 1.5A 80V 12.5W NPN |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BD131 |
Other |
Data Sheet |
Negotiable |
|
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BD132 |
Other |
Data Sheet |
Negotiable |
|
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BD135 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Audio Amplifier |
Data Sheet |
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BD135,137,139 |
Other |
Data Sheet |
Negotiable |
|
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BD13510S |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
Negotiable |
|
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BD13510STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
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