Product Summary
The BD536 is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high
gain performance coupled with very low saturation voltage.
Parametrics
BD536 Parametrics:
Packaging | Tube |
---|---|
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 8A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 800mV @ 600mA, 6A |
Current - Collector Cutoff (Max) | 100μA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 2A, 2V |
Power - Max | 50W |
Frequency - Transition | - |
Mounting Type | Through Hole |
Package/Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Dynamic Catalog | PNP Transistors |
Other Names |
497-7173-5 BD536-ND |
Features
BD536 Features:
The BD536 is the PNP types.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BD536 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Medium Power |
Data Sheet |
|
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BD5360 |
Other |
Data Sheet |
Negotiable |
|
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BD5360FVE-TR |
ROHM Semiconductor |
Voltage Detectors / Monitors CMOS DETEC VOLT 6.0V |
Data Sheet |
|
|
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BD5360G |
Other |
Data Sheet |
Negotiable |
|
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BD5360G-TR |
ROHM Semiconductor |
Voltage Detectors / Monitors CMOS DETEC VOLT 6.0V |
Data Sheet |
|
|
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BD536J |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
Negotiable |
|