Product Summary

The BD536 is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high 

gain performance coupled with very low saturation voltage.

Parametrics

BD536 Parametrics:

Packaging   Tube  
Transistor Type PNP
Current - Collector (Ic) (Max) 8A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 800mV @ 600mA, 6A
Current - Collector Cutoff (Max) 100μA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 2A, 2V
Power - Max 50W
Frequency - Transition -
Mounting Type Through Hole
Package/Case TO-220-3
Supplier Device Package TO-220AB
Dynamic Catalog PNP Transistors
Other Names 497-7173-5
BD536-ND

Features

BD536 Features:

The BD536 is the PNP types.



Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BD536
BD536

STMicroelectronics

Transistors Bipolar (BJT) NPN Medium Power

Data Sheet

0-1500: $0.31
1500-2000: $0.31
2000-5000: $0.29
5000-10000: $0.29
BD5360
BD5360

Other


Data Sheet

Negotiable 
BD5360FVE-TR
BD5360FVE-TR

ROHM Semiconductor

Voltage Detectors / Monitors CMOS DETEC VOLT 6.0V

Data Sheet

0-3000: $0.09
3000-6000: $0.08
BD5360G
BD5360G

Other


Data Sheet

Negotiable 
BD5360G-TR
BD5360G-TR

ROHM Semiconductor

Voltage Detectors / Monitors CMOS DETEC VOLT 6.0V

Data Sheet

0-3000: $0.08
BD536J
BD536J

Fairchild Semiconductor

Transistors Bipolar (BJT) PNP Epitaxial Sil

Data Sheet

Negotiable