(China (Mainland))
Product Summary
The device is a multiepitaxial mesa NPN transistor mounted in TO-247 plastic package.
It is intended for switching and industrial applications from single and three-phase mains.
Parametrics
BUV48A Parametrics:
Packaging
Tube
Transistor Type
NPN
Current - Collector (Ic) (Max)
15A
Voltage - Collector Emitter Breakdown (Max)
450V
Vce Saturation (Max) @ Ib, Ic
5V @ 2.4A, 12A
Current - Collector Cutoff (Max)
200μA
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 8A, 5V
Power - Max
125W
Frequency - Transition
-
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Other Names
497-2544-5
Features
BUV48A Features:
■ High current capability
■ Fast switching speed
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BUV48A-S |
Bourns |
Transistors Bipolar (BJT) 1000V 15A NPN |
Data Sheet |
Negotiable |
|
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 |
BUV48AFI |
STMicroelectronics |
Transistors Bipolar (BJT) NPN High Volt Power |
Data Sheet |
Negotiable |
|
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|
BUV48A |
STMicroelectronics |
Transistors Bipolar (BJT) NPN High Volt Power |
Data Sheet |
|
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