Product Summary
The FDN352A is a high-performance Single P-Channel, PowerTrench? MOSFET.
Parametrics
FDN352A Parametrics:
Packaging | Tape & Reel (TR) |
---|---|
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.3A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Gate Charge (Qg) @ Vgs | 1.9nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 150pF @ 15V |
Power - Max | 460mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | 3-SSOT |
Dynamic Catalog | P-Channel Logic Level Gate FETs |
Other Names | FDN352AP-ND |
Features
FDN352A Features:
■ –1.3 A, –30V RDS(ON)= 180 mΩ @ VGS = –10V
–1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V
■ High performance trench technology for extremely low RDS(ON)
■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher
power handling capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FDN352AP |
Fairchild Semiconductor |
MOSFET SINGLE PCH TRENCH MOSFET |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FDN302P |
Fairchild Semiconductor |
MOSFET SSOT-3 P-CH 2.5V |
Data Sheet |
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FDN302P_Q |
Fairchild Semiconductor |
MOSFET SSOT-3 P-CH 2.5V |
Data Sheet |
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FDN304P |
Fairchild Semiconductor |
MOSFET SSOT-3 P-CH 1.8V |
Data Sheet |
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FDN304PZ |
Fairchild Semiconductor |
MOSFET P-Ch PowerTrench Specified 1.8V |
Data Sheet |
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FDN304PZ_Q |
Fairchild Semiconductor |
MOSFET P-Ch PowerTrench Specified 1.8V |
Data Sheet |
Negotiable |
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FDN306P |
Fairchild Semiconductor |
MOSFET P-Ch PowerTrench Specified 1.8V |
Data Sheet |
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