(China (Mainland))
Product Summary
FDPF51N25 is Fairchild Semiconductor’s high voltage.
FDPF51N25 based on planar stripe and DMOS technology.
FDPF51N25 is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche
energy strength.
Parametrics
FDPF51N25 Parametrics:
Packaging
Tube
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
250V
Current - Continuous Drain (Id) @ 25°C
51A (Tc)
Rds On (Max) @ Id, Vgs
60 mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Gate Charge (Qg) @ Vgs
70nC @ 10V
Input Capacitance (Ciss) @ Vds
3410pF @ 25V
Power - Max
38W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Features
FDPF51N25 Features:
- RDS(on) = 48 mΩ (Typ.) @ VGS = 10 V, ID = 25.5 A
- Low Gate Charge (Typ. 55 nC)
- Low Crss (Typ. 63 pF)
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 FDPF51N25 |
Fairchild Semiconductor |
MOSFET 250V N-Channel MOSFET |
Data Sheet |
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FDPF51N25YDTU |
Fairchild Semiconductor |
MOSFET 250V 28A N-CH UNIFET |
Data Sheet |
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