Product Summary

The FDS6900AS is a high-performance MOSFET .

Parametrics

FDS6900AS Parametrics:

Packaging   Tape & Reel (TR) 
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.9A, 8.2A
Rds On (Max) @ Id, Vgs 27 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) @ Vds 600pF @ 15V
Power - Max 900mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Dynamic Catalog N-Channel Logic Level Gate FETs
Other Names FDS6900AS-ND
FDS6900ASTR

Features

FDS6900AS Features:

? Q2: Optimized to minimize conduction losses 
    Includes SyncFET Schottky body diode  
   8.2A,  30V RDS(on) = 22mΩ @ VGS = 10V 
    RDS(on) = 28mΩ @ VGS= 4.5V 
? Q1: Optimized for low switching losses 
   Low Gate Charge (11nC typical) 
  6.9A,  30V RDS(on)= 27mΩ @ VGS = 10V 
    RDS(on) = 34mΩ @ VGS= 4.5V 
? 100% RG  (Gate Resistance) Tested 

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FDS6900AS
FDS6900AS

Fairchild Semiconductor

MOSFET Dual NCh PowerTrench

Data Sheet

0-1700: $0.25
1700-2000: $0.23
2000-2500: $0.23
2500-5000: $0.22
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