Product Summary
The FDS6900AS is a high-performance MOSFET .
Parametrics
FDS6900AS Parametrics:
Packaging
Tape & Reel (TR)
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
6.9A, 8.2A
Rds On (Max) @ Id, Vgs
27 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Gate Charge (Qg) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) @ Vds
600pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Dynamic Catalog
N-Channel Logic Level Gate FETs
Other Names
FDS6900AS-ND
FDS6900ASTR
Features
FDS6900AS Features:
? Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.2A, 30V RDS(on) = 22mΩ @ VGS = 10V
RDS(on) = 28mΩ @ VGS= 4.5V
? Q1: Optimized for low switching losses
Low Gate Charge (11nC typical)
6.9A, 30V RDS(on)= 27mΩ @ VGS = 10V
RDS(on) = 34mΩ @ VGS= 4.5V
? 100% RG (Gate Resistance) Tested
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDS6900AS |
Fairchild Semiconductor |
MOSFET Dual NCh PowerTrench |
Data Sheet |
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Data Sheet |
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