Product Summary

The FQD2N100TM is a high-performance N-Channel QFET? MOSFET 1000 V, 1.6 A, 9 Ω.

Parametrics

FQD2N100TM Parametrics:

Packaging Tape & Reel (TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Rds On (Max) @ Id, Vgs 9 Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Gate Charge (Qg) @ Vgs 15.5nC @ 10V
Input Capacitance (Ciss) @ Vds 520pF @ 25V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak
Dynamic Catalog N-Channel Standard FETs
Other Names FQD2N100TM-ND

Features

FQD2N100TM Features:

?1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V,ID = 0.8 A
?Low Gate Charge ( Typ. 12 nC)
?Low Crss ( Typ. 5 pF)
?100% Avalanche Tested
? RoHS Compliant

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FQD2N100TM
FQD2N100TM

Fairchild Semiconductor

MOSFET 1000V N-Channel QFET

Data Sheet

0-1: $0.62
1-25: $0.51
25-100: $0.44
100-250: $0.35
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