Product Summary
The FQD2N100TM is a high-performance N-Channel QFET? MOSFET 1000 V, 1.6 A, 9 Ω.
Parametrics
FQD2N100TM Parametrics:
Packaging
Tape & Reel (TR)
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
1000V (1kV)
Current - Continuous Drain (Id) @ 25°C
1.6A (Tc)
Rds On (Max) @ Id, Vgs
9 Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Gate Charge (Qg) @ Vgs
15.5nC @ 10V
Input Capacitance (Ciss) @ Vds
520pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-Pak
Dynamic Catalog
N-Channel Standard FETs
Other Names
FQD2N100TM-ND
Features
FQD2N100TM Features:
?1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V,ID = 0.8 A
?Low Gate Charge ( Typ. 12 nC)
?Low Crss ( Typ. 5 pF)
?100% Avalanche Tested
? RoHS Compliant
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FQD2N100TM |
Fairchild Semiconductor |
MOSFET 1000V N-Channel QFET |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FQD20N06 |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
FQD20N06L |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
FQD20N06LE |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
FQD20N06LETF |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
|
|||||||||||||
FQD20N06LETM |
Fairchild Semiconductor |
MOSFET 60V N-Ch QFET Logic Level |
Data Sheet |
Negotiable |
|
|||||||||||||
FQD20N06LTF |
Fairchild Semiconductor |
MOSFET 60V N-Ch QFET Logic Level |
Data Sheet |
Negotiable |
|