Product Summary
The FQD7P20TM is a high-performance P-Channel QFET? MOSFET.
Parametrics
FQD7P20TM Parametrics:
Packaging
Tape & Reel (TR)
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
5.7A
Rds On (Max) @ Id, Vgs
690 mOhm @ 2.85A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Gate Charge (Qg) @ Vgs
25nC @ 10V
Input Capacitance (Ciss) @ Vds
770pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252-3
Dynamic Catalog
P-Channel Standard FETs
Other Names
FQD7P20TM-ND
FQD7P20TMTR
Features
FQD7P20TM Features:
? -5.7 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V,ID = -2.85 A
?Low Gate Charge (Typ. 19 nC)
?Low Crss (Typ. 25 pF)
? 100% Avalanche Tested
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FQD7P20TM |
Fairchild Semiconductor |
MOSFET 200V P-Channel QFET |
Data Sheet |
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FQD7P20TM_F080 |
Fairchild Semiconductor |
MOSFET Trans MOS P-Ch 200V 5.7A 3-Pin 2+Tab |
Data Sheet |
Negotiable |
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