(China (Mainland))
Product Summary
The FQPF6N80C is a high-performance N-Channel QFET? MOSFET 800 V, 5.5 A, 2.5 Ω .
Parametrics
FQPF6N80C Parametrics:
Packaging
Tube
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Rds On (Max) @ Id, Vgs
2.5 Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Gate Charge (Qg) @ Vgs
30nC @ 10V
Input Capacitance (Ciss) @ Vds
1310pF @ 25V
Power - Max
51W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Dynamic Catalog
N-Channel Standard FETs
Features
FQPF6N80C Features:
?5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V,ID = 2.75 A
?Low Gate Charge (Typ. 21 nC)
?Low Crss (Typ. 8 pF)
? 100% Avalanche Tested
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FQPF6N80C |
Fairchild Semiconductor |
MOSFET 800V N-Ch Q-FET advance C-Series |
Data Sheet |
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FQPF6N80CT |
Fairchild Semiconductor |
MOSFET 800V N-Ch Adv Q-FET C-Series |
Data Sheet |
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