Product Summary
The FQPF7N80C is a high-performance N-Channel enhancement mode power MOSFET. This N-Channel enhancement mode
power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology
Parametrics
FQPF7N80C Parametrics:
Packaging
Tube
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25°C
6.6A (Tc)
Rds On (Max) @ Id, Vgs
1.9 Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Gate Charge (Qg) @ Vgs
35nC @ 10V
Input Capacitance (Ciss) @ Vds
1680pF @ 25V
Power - Max
56W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Features
FQPF7N80C Features:
- 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V,ID = 3.3 A
- Low Gate Charge (Typ. 27 nC)
- Low Crss (Typ. 10 pF)
- 100% Avalanche Tested
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FQPF7N80C |
Fairchild Semiconductor |
MOSFET 800V N-Ch Q-FET advance C-Series |
Data Sheet |
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Quantity | |||||||||||||
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Data Sheet |
Negotiable |
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Fairchild Semiconductor |
MOSFET 200V N-Ch MOSFET |
Data Sheet |
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FQPF10N20T |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
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Fairchild Semiconductor |
MOSFET 500V N-Ch MOSFET |
Data Sheet |
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FQPF10N60C |
Fairchild Semiconductor |
MOSFET 600V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
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FQPF10N60CF |
Fairchild Semiconductor |
MOSFET 600V N-Ch MOSFET |
Data Sheet |
Negotiable |
|