(China (Mainland))
Product Summary
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Parametrics
IRF530NPBF Parametrics:
| Series | HEXFET? |
|---|---|
| Packaging | Tube |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) @ Vgs | 37nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 920pF @ 25V |
| Power - Max | 70W |
| Mounting Type | Through Hole |
| Package/Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Dynamic Catalog | N-Channel Logic Level Gate FETs |
| Other Names | *IRF530NPBF |
Features
IRF530NPBF Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF530NPBF |
International Rectifier |
MOSFET MOSFT 100V 17A 90mOhm 24.7nC |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
IRF500 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IRF510 |
Vishay/Siliconix |
MOSFET N-Chan 100V 5.6 Amp |
Data Sheet |
|
|
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|
IRF510, SiHF510 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
IRF510_R4941 |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
|
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|
IRF510A |
Fairchild Semiconductor |
MOSFET 100V .2 OHM 33W |
Data Sheet |
Negotiable |
|
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|
IRF510A_Q |
Fairchild Semiconductor |
MOSFET 100V .2 Ohm 33W |
Data Sheet |
Negotiable |
|
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