Product Summary
The IRF530PBF is a high-performance Power MOSFET.
Parametrics
IRF530PBF Parametrics:
Packaging
Tube
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Rds On (Max) @ Id, Vgs
160 mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Gate Charge (Qg) @ Vgs
26nC @ 10V
Input Capacitance (Ciss) @ Vds
670pF @ 25V
Power - Max
88W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Dynamic Catalog
N-Channel Standard FETs
Other Names
*IRF530PBF
Features
IRF530PBF Features:
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? 175 °C Operating Temperature
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF530PBF |
Vishay/Siliconix |
MOSFET N-Chan 100V 14 Amp |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF500 |
Other |
Data Sheet |
Negotiable |
|
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IRF510 |
Vishay/Siliconix |
MOSFET N-Chan 100V 5.6 Amp |
Data Sheet |
|
|
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IRF510, SiHF510 |
Other |
Data Sheet |
Negotiable |
|
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IRF510_R4941 |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
|
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IRF510A |
Fairchild Semiconductor |
MOSFET 100V .2 OHM 33W |
Data Sheet |
Negotiable |
|
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IRF510A_Q |
Fairchild Semiconductor |
MOSFET 100V .2 Ohm 33W |
Data Sheet |
Negotiable |
|