(China (Mainland))
Product Summary
The MGSF1N03LT1 is a high-performance Power MOSFET.
Parametrics
MGSF1N03LT1 Parametrics:
Packaging
Cut Tape (CT)
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)
Rds On (Max) @ Id, Vgs
100 mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250μA
Gate Charge (Qg) @ Vgs
-
Input Capacitance (Ciss) @ Vds
140pF @ 5V
Power - Max
420mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Other Names
MGSF1N03LT1OSCT
Features
MGSF1N03LT1 Features:
? Low RDS(on) Provides Higher Efficiency and Extends Battery Life
? Miniature SOT?23 Surface Mount Package Saves Board Space
? AEC?Q101 Qualified and PPAP Capable ? MVGSF1N03LT1
? These Devices are Pb?Free and are RoHS Compliant
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MGSF1N03LT1 |
ON Semiconductor |
MOSFET 30V 2.1A N-Channel |
Data Sheet |
Negotiable |
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MGSF1N03LT1G |
ON Semiconductor |
MOSFET 30V 2.1A N-Channel |
Data Sheet |
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