(China (Mainland))
Product Summary
The MJE15033G is a high-performance Complementary Silicon Plastic Power Transistor.
Parametrics
MJE15033G Parametrics:
Packaging
Tube
Transistor Type
PNP
Current - Collector (Ic) (Max)
8A
Voltage - Collector Emitter Breakdown (Max)
250V
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 2A, 5V
Power - Max
2W
Frequency - Transition
30MHz
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Dynamic Catalog
PNP Transistors
Other Names
MJE15033GOS
Features
MJE15033G Features:
? High DC Current Gain
? High Current Gain ? Bandwidth Product
? TO?220 Compact Package
? Epoxy Meets UL 94 V?0 @ 0.125 in
? These Devices are Pb?Free and are RoHS Compliant*
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MJE15033G |
ON Semiconductor |
Transistors Bipolar (BJT) 8A 250V 50W PNP |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Data Sheet |
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MJE13003 |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 2A 400V |
Data Sheet |
Negotiable |
|
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