Product Summary

The SI4835DDY-T1-E3 is a high-performance P-Channel 30-V (D-S) MOSFET.

Parametrics

SI4835DDY-T1-E3 Parametrics:

Packaging   Tape & Reel (TR)  
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8.7A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs 18 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) @ Vgs 65nC @ 10V
Input Capacitance (Ciss) @ Vds 1960pF @ 15V
Power - Max 5.6W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC N
Dynamic Catalog P-Channel Standard FETs
Other Names SI4835DDY-T1-E3-ND
SI4835DDY-T1-E3TR
SI4835DDYT1E3



Features

SI4835DDY-T1-E3 Features:

? Halogen-free According to IEC 61249-2-21 Available
? TrenchFET? Power MOSFET
? 100 % Rg Tested
? 100 % UIS Tested


Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI4835DDY-T1-E3
SI4835DDY-T1-E3

Vishay/Siliconix

MOSFET 30V 13A 5.6W 18mohm @ 10V

Data Sheet

0-1: $0.57
1-10: $0.53
10-50: $0.50
50-100: $0.46
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
Si4800
Si4800

Other


Data Sheet

Negotiable 
SI4800,518
SI4800,518


MOSFET N-CH 30V 9A SOT96-1

Data Sheet

Negotiable 
SI4800BDY-T1-E3
SI4800BDY-T1-E3

Vishay/Siliconix

MOSFET 30V 9A 2.5W

Data Sheet

0-1: $0.46
1-25: $0.35
25-50: $0.33
50-100: $0.31
SI4800BDY-T1-GE3
SI4800BDY-T1-GE3

Vishay/Siliconix

MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V

Data Sheet

0-1: $0.44
1-10: $0.31
10-50: $0.31
50-100: $0.30
SI4800DY
SI4800DY

Vishay/Siliconix

MOSFET 30V 9A 2.5W

Data Sheet

Negotiable 
SI4800DY-E3
SI4800DY-E3

Vishay/Siliconix

MOSFET 30V 9A 2.5W

Data Sheet

Negotiable