Product Summary
The SI4835DDY-T1-E3 is a high-performance P-Channel 30-V (D-S) MOSFET.
Parametrics
SI4835DDY-T1-E3 Parametrics:
Packaging
Tape & Reel (TR)
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
8.7A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs
18 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Gate Charge (Qg) @ Vgs
65nC @ 10V
Input Capacitance (Ciss) @ Vds
1960pF @ 15V
Power - Max
5.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N
Dynamic Catalog
P-Channel Standard FETs
Other Names
SI4835DDY-T1-E3-ND
SI4835DDY-T1-E3TR
SI4835DDYT1E3
Features
SI4835DDY-T1-E3 Features:
? Halogen-free According to IEC 61249-2-21 Available
? TrenchFET? Power MOSFET
? 100 % Rg Tested
? 100 % UIS Tested
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SI4835DDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 13A 5.6W 18mohm @ 10V |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
Si4800 |
Other |
Data Sheet |
Negotiable |
|
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SI4800,518 |
MOSFET N-CH 30V 9A SOT96-1 |
Data Sheet |
Negotiable |
|
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SI4800BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
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|
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SI4800BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
Data Sheet |
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SI4800DY |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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SI4800DY-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
|