(China (Mainland))
Product Summary
The STW15NB50 is a high-performance MOSFET.
Parametrics
STW15NB50 Parametrics:
Packaging
Tube
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
14.6A (Tc)
Rds On (Max) @ Id, Vgs
360 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Gate Charge (Qg) @ Vgs
80nC @ 10V
Input Capacitance (Ciss) @ Vds
3400pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Other Names
497-2664-5
Features
STW15NB50 Features:
- TYPICAL RDS(on) = 0.33 Ω
- EXTREMELY HIGH dv/dt CAPABILITY
- ± 30V GATE TO SOURCE VOLTAGE RATING
- 100% AVALANCHE TESTED
- VERY LOW INTRINSIC CAPACITANCES
- GATE CHARGE MINIMIZED
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 STW15NB50 |
STMicroelectronics |
MOSFET N-Ch 500 Volt 14.6 A |
Data Sheet |
Negotiable |
|
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Pricing (USD) |
Quantity | ||||||||||||
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Data Sheet |
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Data Sheet |
Negotiable |
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Data Sheet |
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Data Sheet |
Negotiable |
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Data Sheet |
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Data Sheet |
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