Product Summary

The 2SK3065T100 is a Small switching (60V, 2A).The 2SK3065T100's structure feature is Silicon N-channel and MOS FET

transistor.

Parametrics

2SK3065T100 Parametrics:

Packaging Tape & Reel (TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25° C 2A (Ta)
Rds On (Max) @ Id, Vgs 320 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 160pF @ 10V
Power - Max 500mW
Mounting Type Surface Mount
Package/Case TO-243AA
Supplier Device Package MPT3
Dynamic Catalog N-Channel Logic Level Gate FETs
Other Names 2SK3065T100TR

Features

2SK3065T100 Features:


  • Low on resistance.
  • High-speed switching.
  • Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation).
  • Driving circuit is easy.
  • Easy to use parallel.
  • It is strong to an electrostatic discharge


Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SK3065T100
2SK3065T100

ROHM Semiconductor

MOSFET N-CH 60V 2A

Data Sheet

0-1: $0.34
1-25: $0.29
25-100: $0.26
100-500: $0.18
500-1000: $0.15
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(USD)
Quantity
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0-1: $3.89
1-10: $3.50
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100-250: $2.99