Product Summary
The 2SK3065T100 is a Small switching (60V, 2A).The 2SK3065T100's structure feature is Silicon N-channel and MOS FET
transistor.
Parametrics
2SK3065T100 Parametrics:
Packaging | Tape & Reel (TR) |
---|---|
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 2A (Ta) |
Rds On (Max) @ Id, Vgs | 320 mOhm @ 1A, 4V |
Vgs(th) (Max) @ Id | 1.5V @ 1mA |
Gate Charge (Qg) @ Vgs | - |
Input Capacitance (Ciss) @ Vds | 160pF @ 10V |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package/Case | TO-243AA |
Supplier Device Package | MPT3 |
Dynamic Catalog |
N-Channel Logic Level Gate FETs |
Other Names | 2SK3065T100TR |
Features
2SK3065T100 Features:
- Low on resistance.
- High-speed switching.
- Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation).
- Driving circuit is easy.
- Easy to use parallel.
- It is strong to an electrostatic discharge
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
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2SK3065T100 |
ROHM Semiconductor |
MOSFET N-CH 60V 2A |
Data Sheet |
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