Product Summary
The NJM4558D integrated circuit is a dual high-gain operational amplifier internally compensated and constructed on a
single silicon chip using an advanced epitaxial process.
Combining the features of the NJM741 with the close parameter matching and tracking of a dual device on a monolithic chip
results in unique performance characteristics.Excellent channel separation allow the use of the dual device in single NJM741
operational amplifier applications providing density.It is especially well suited for applications in differential-in,defferential-out as
well as in potentiometric amplifiers and where gain and phase matched channels are mandatory.
Parametrics
NJM4558D Parametrics:(1)Supply Voltage: ± 18 V (2)Differential Input Voltage: ± 30 V (4)Power Dissipation:500mW
(5)Operating Temperature Range : -40~+85 ?C (6)Storage Temperature Range: -40~+125 ?C
Features
NJM4558D Features:(1)Operating Voltage : ±4V~±18V (2)High Voltage Gain:100dB typ. (3)High Input Resistance:5MΩ typ.
(4)Bipolar Technology (5)Package Outline:DIP8,
Image | Part No | Mfg | Description | Pricing (USD) |
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NJM4558D |
NJR |
Operational Amplifiers - Op Amps Dual High Gain |
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NJM4558DD |
NJR |
Operational Amplifiers - Op Amps Dual High Gain |
Data Sheet |
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NJM4558DQ |
NJR |
Operational Amplifiers - Op Amps Dual High Gain |
Data Sheet |
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NJM4558DX |
NJR |
Operational Amplifiers - Op Amps Dual High Gain |
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NJM4558D# |
NJR |
IC DUAL HIGH GAIN OPAMP 8-DIP |
Data Sheet |
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