(China (Mainland))
Product Summary
The FGA180N33ATDTU is a high-performance IGBTs.
Parametrics
FGA180N33ATDTU Parametrics:
Packaging
Tube
IGBT Type
Trench
Voltage - Collector Emitter Breakdown (Max)
330V
Current - Collector (Ic) (Max)
180A
Current - Collector Pulsed (Icm)
450A
Vce(on) (Max) @ Vge, Ic
1.4V @ 15V, 40A
Power - Max
390W
Switching Energy
-
Input Type
Standard
Gate Charge
169nC
Td (on/off) @ 25°C
-
Test Condition
-
Reverse Recovery Time (trr)
27ns
Package / Case
TO-3P-3, SC-65-3
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Dynamic Catalog
Standard IGBTs
Features
FGA180N33ATDTU Features:
?High Current Capability
?Low saturation voltage: VCE(sat) =1.03V @ IC = 40A
?High input impedance
?RoHS compliant
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FGA180N33ATDTU |
Fairchild Semiconductor |
IGBT Transistors 330V 180A PDP Trench |
Data Sheet |
|
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Pricing (USD) |
Quantity | ||||||||||||
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Fairchild Semiconductor |
IGBT Transistors 300V PDP IGBT |
Data Sheet |
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Other |
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Data Sheet |
Negotiable |
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Fairchild Semiconductor |
IGBT Transistors NPT IGBT |
Data Sheet |
Negotiable |
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FGA15N120ANTD |
Other |
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Data Sheet |
Negotiable |
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|
FGA15N120ANTDTU |
Fairchild Semiconductor |
IGBT Transistors 1200V NPT Trench IGBT |
Data Sheet |
Negotiable |
|
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|
FGA15N120ANTDTU_F109 |
Fairchild Semiconductor |
IGBT Transistors 1200V NPT Trench |
Data Sheet |
|
|
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