Product Summary
Firstly,the IRFB3607PBF can Improved Gate, Avalanche and Dynamic dv/dt Ruggedness. Secondly, The IRFB3607PBF also can
Fully Characterized Capacitance and Avalanche SOA. Finally,The IRFB3607PBF can Enhanced body diode dV/dt and dI/dt Capability.
Parametrics
IRFB3607PBF Parametrics: (1)Continuous Drain Current(Id) @ 25° C : 80A(Tc) (2)Pulsed Drain Current:310A
(3)Continuous Drain Current(Id)@100° C:56(Tc) (4)Maximum Power Dissipation: 140W
(5)Linear Derating Factor: 0.96 (6)Gate-to-Source Voltage: ± 20V
(6)Operating Junction and Storage Temperature Range: -55 to + 175°C
(7)Mounting torque, 6-32 or M3 screw: 10lb in (1.1N m)
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRFB3607PBF |
International Rectifier |
MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRFB11N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
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IRFB11N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
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IRFB13N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFB13N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFB16N50K |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
Negotiable |
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IRFB16N50KPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
Negotiable |
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