Product Summary

The FDC6321C is a high-performance Dual N & P Channel , Digital FET.

Parametrics

FDC6321C Parametrics:

Packaging Tape & Reel (TR)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 680mA, 460mA
Rds On (Max) @ Id, Vgs 450 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Gate Charge (Qg) @ Vgs 2.3nC @ 5V
Input Capacitance (Ciss) @ Vds 50pF @ 10V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-SSOT
Dynamic Catalog N and P-Channel Logic Level Gate FETs
Other Names FDC6321C-ND

Features

FDC6321C Features:


  • N-Ch 25 V, 0.68 A,  RDS(ON)= 0.45 W @ VGS= 4.5 V
  • P-Ch -25 V, -0.46 A, RDS(ON)= 1.1 W @ VGS= -4.5 V.
  • Very low level gate drive requirements allowing  direct
  • operation in 3 V circuits. VGS(th) < 1.0V.
  • Gate-Source Zener for ESD ruggedness.


>6kV Human Body Model

  • Replace multiple dual NPN & PNP digital transistors.


Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDC6321C
FDC6321C
Fairchild Semiconductor
MOSFET SSOT-6 COMP N-P-CH
Data Sheet
0-1: $0.30
1-25: $0.25
25-100: $0.22
100-250: $0.19
FDC6321C_Q
FDC6321C_Q
Fairchild Semiconductor
MOSFET SSOT-6 COMP N-P-CH
Data Sheet
Negotiable