(China (Mainland))
Product Summary
The STP10NK70ZFP is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In
addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most
demanding applications
Parametrics
STP10NK70ZFP Parametrics:
- Series: SuperMESH?
- Packaging: Tube
- FET Type: MOSFET N-Channel, Metal Oxide
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25° C: 8.6A (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100μA
- Gate Charge (Qg) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) @ Vds: 2000pF @ 25V
- Power - Max: 35W
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
- Dynamic Catalog: N-Channel Standard FETs
Features
STP10NK70ZFP Features:
- EXTREMELY HIGH dv/dt CAPABILITY
- IMPROVED ESD CAPABILITY
- 100% AVALANCHE TESTED
- GATE CHARGE MINIMIZED
- VERY LOW INTRINSIC CAPACITANCES
- VERY GOOD MANUFACTURING REPEABILITY
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 STP10NK70ZFP |
STMicroelectronics |
MOSFET N-Ch, 700V-0.75ohms Zener SuperMESH 8.6A |
Data Sheet |
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