(China (Mainland))
Product Summary
The IRF520 is a high-performance Power MOSFET.
Parametrics
IRF520 Parametrics:
Packaging
Tube
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
9.2A (Tc)
Rds On (Max) @ Id, Vgs
270 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Gate Charge (Qg) @ Vgs
16nC @ 10V
Input Capacitance (Ciss) @ Vds
360pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Other Names
*IRF520
IRF520IR
Features
IRF520 Features:
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? 175 °C Operating Temperature
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF520 |
Vishay/Siliconix |
MOSFET N-Chan 100V 9.2 Amp |
Data Sheet |
|
|
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 |
IRF520, SiHF520 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IRF520_R4941 |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
|
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|
IRF520A |
Fairchild Semiconductor |
MOSFET 9.2A 100V .4 OHM |
Data Sheet |
Negotiable |
|
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|
IRF520F |
Other |
|
Data Sheet |
Negotiable |
|
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|
IRF520FI |
Other |
|
Data Sheet |
Negotiable |
|
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|
IRF520L |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
IRF520N |
|
MOSFET N-CH 100V 9.7A TO-220AB |
Data Sheet |
|
|
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