(China (Mainland))
Product Summary
The IRF630NPBF is a high-performance and high-quality HEXFET? Power MOSFETs,its pakeage is TO-220AB.
Parametrics
IRF630NPBF Parametrics:
Packaging
Tube
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25° C
9.3A (Tc)
Rds On (Max) @ Id, Vgs
300 mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Gate Charge (Qg) @ Vgs
35nC @ 10V
Input Capacitance (Ciss) @ Vds
575pF @ 25V
Power - Max
82W
Mounting Type
Through Hole
Package/Case
TO-220-3
Supplier Device Package
TO-220AB
Dynamic Catalog
N-Channel Standard FETs
Other Names
*IRF630NPBF
Features
IRF630NPBF Features:
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
- Lead-Free
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF630NPBF |
International Rectifier |
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
IRF610 |
Vishay/Siliconix |
MOSFET N-Chan 200V 3.3 Amp |
Data Sheet |
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IRF610, SiHF610 |
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Data Sheet |
Negotiable |
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IRF610_R4941 |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
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IRF6100 |
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MOSFET P-CH 20V 5.1A FLIP-FET |
Data Sheet |
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IRF6100PBF |
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MOSFET P-CH 20V 5.1A FLIPFET |
Data Sheet |
Negotiable |
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IRF610A |
Other |
|
Data Sheet |
Negotiable |
|
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