Product Summary
The D45H11G is a high-performance Complementary Silicon Power Transistors.
Parametrics
D45H11G Parametrics:
Packaging
Tube
Transistor Type
PNP
Current - Collector (Ic) (Max)
10A
Voltage - Collector Emitter Breakdown (Max)
80V
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Current - Collector Cutoff (Max)
10μA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A, 1V
Power - Max
2W
Frequency - Transition
40MHz
Mounting Type
Through Hole
Package/Case
TO-220-3
Supplier Device Package
TO-220AB
Dynamic Catalog
PNP Transistors
Other Names
D45H11GOS
Features
D45H11G Features:
? Low Collector?Emitter Saturation Voltage
? Fast Switching Speeds
? Complementary Pairs Simplifies Designs
? These Devices are Pb?Free and are RoHS Compliant*
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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D45H11G |
ON Semiconductor |
Transistors Bipolar (BJT) 10A 80V 50W PNP |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
D45H11G |
ON Semiconductor |
Transistors Bipolar (BJT) 10A 80V 50W PNP |
Data Sheet |
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D45Hxx |
Other |
Data Sheet |
Negotiable |
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D45H8G |
ON Semiconductor |
Transistors Bipolar (BJT) 10A 60V 50W PNP |
Data Sheet |
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D45H8 |
STMicroelectronics |
Transistors Bipolar (BJT) PNP General Purpose |
Data Sheet |
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D45H5 |
STMicroelectronics |
Transistors Bipolar (BJT) PNP General Purpose |
Data Sheet |
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D45H2A_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Power Transistor |
Data Sheet |
Negotiable |
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