(China (Mainland))
Product Summary
The NTMFS4852NT1G is a high-performance Power MOSFET.
Parametrics
NTMFS4852NT1G Parametrics:
Packaging
Tape & Reel (TR)
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
16A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs
2.1 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Gate Charge (Qg) @ Vgs
71.3nC @ 10V
Input Capacitance (Ciss) @ Vds
4970pF @ 12V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-TDFN Exposed Pad (5 Lead)
Supplier Device Package
6-DFN, 8-SO Flat Lead (5x6)
Dynamic Catalog
N-Channel Logic Level Gate FETs
Other Names
NTMFS4852NT1G-ND
NTMFS4852NT1GOSTR
Features
NTMFS4852NT1G Features:
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Pb?Free
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 NTMFS4852NT1G |
ON Semiconductor |
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Data Sheet |
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