(China (Mainland))
Product Summary
The SI4835BDY-T1-E3 is a high-performance P-Channel 30-V (D-S) MOSFET.
Parametrics
SI4835BDY-T1-E3 Parametrics:
Packaging
Tape & Reel (TR)
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
7.4A (Ta)
Rds On (Max) @ Id, Vgs
18 mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Gate Charge (Qg) @ Vgs
37nC @ 5V
Input Capacitance (Ciss) @ Vds
-
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N
Other Names
SI4835BDY-T1-E3TR
Features
SI4835BDY-T1-E3 Features:
- TrenchFET Power MOSFET
- Advanced High Cell Density Process
- 100% Rg Tested
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4835BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 9.6A 0.018Ohm |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
Si4800 |
Other |
|
Data Sheet |
Negotiable |
|
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 |
SI4800,518 |
|
MOSFET N-CH 30V 9A SOT96-1 |
Data Sheet |
Negotiable |
|
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|
SI4800BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
|
|
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|
SI4800BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
Data Sheet |
|
|
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|
SI4800DY |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
|
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|
SI4800DY-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
|
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