Product Summary
The SPA11N60C3 is a INFINEON MOSFET,which is manufactured by New revolutionary high voltage technology.
The SPA11N60C3 has high quality ,and through strict test.
Parametrics
SPA11N60C3 Parametrics:
- Packaging: Tube
- FET Type: MOSFET N-Channel, Metal Oxide
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25° C: 11A (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 500μA
- Gate Charge (Qg) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) @ Vds: 1200pF @ 25V
- Power - Max: 33W
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: PG-TO220-FP
Features
SPA11N60C3 Features:
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Improved transconductance
- PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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SPA11N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 11A |
Data Sheet |
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Quantity | |||||||||||||
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