Product Summary

The SPP24N60C3 is a high-performance Cool MOS? Power Transistor.

Parametrics

SPP24N60C3 Parametrics:

Packaging Tube
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 24.3A (Tc)
Rds On (Max) @ Id, Vgs 160 mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1.2mA
Gate Charge (Qg) @ Vgs 135nC @ 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 25V
Power - Max 240W
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3
Dynamic Catalog N-Channel Standard FETs
Other Names SP000014690
SPP24N60C3-ND
SPP24N60C3HKSA1
SPP24N60C3IN
SPP24N60C3X
SPP24N60C3XK

Features

SPP24N60C3 Features:

? New revolutionary high voltage technology
? Worldwide best RDS(on) in TO 220
? Ultra low gate charge
? Periodic avalanche rated
? Extreme dv/dt rated
? Ultra low effective capacitances
? Improved transconductance

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPP24N60C3
SPP24N60C3
Infineon Technologies
MOSFET COOL MOS N-CH 650V 24.3A
Data Sheet
0-1: $3.13
1-10: $2.51
10-100: $2.29
100-250: $1.85
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPP24N60C3
SPP24N60C3
Infineon Technologies
MOSFET COOL MOS N-CH 650V 24.3A
Data Sheet
0-1: $3.13
1-10: $2.51
10-100: $2.29
100-250: $1.85
SPP2R200JTR
SPP2R200JTR
IRC
Wirewound Resistors - Through Hole .2 OHM 5% 2W
Data Sheet
0-1: $0.40
1-4000: $0.10
4000-8000: $0.10
8000-20000: $0.09
SPP2R200JLFTR
SPP2R200JLFTR
IRC
Wirewound Resistors - Through Hole .2 OHM 5% 2W
Data Sheet
0-1: $0.44
1-2500: $0.11
2500-5000: $0.11
5000-10000: $0.10
SPP24N60CFD
SPP24N60CFD
Infineon Technologies
MOSFET COOL MOS PWR TRANS 650V 0.185 Ohms
Data Sheet
0-245: $2.59
245-250: $2.33
250-500: $2.09
500-1000: $1.76
SPP233R0JLFTR
SPP233R0JLFTR
IRC
Wirewound Resistors - Through Hole 33 OHM 5% 2W
Data Sheet
0-1: $0.33
1-4000: $0.11
4000-8000: $0.10
8000-20000: $0.10
SPP2301
SPP2301
Other

Data Sheet
Negotiable