(China (Mainland))
Product Summary
TheMJE182G is designed for low power audio amplifier and low current, high speed switching applications.
Parametrics
MJE182G Parametrics:
Packaging
Bulk
Transistor Type
NPN
Current - Collector (Ic) (Max)
3A
Voltage - Collector Emitter Breakdown (Max)
80V
Vce Saturation (Max) @ Ib, Ic
1.7V @ 600mA, 3A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA, 1V
Power - Max
1.5W
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO225AA
Dynamic Catalog
NPN Transistors
Other Names
MJE182GOS
Features
MJE182G Features:
? High DC Current Gain
? High Current?Gain ? Bandwidth Product
? Annular Construction for Low Leakages
? Epoxy Meets UL 94 V?0 @ 0.125 in
? These Devices are Pb?Free and are RoHS Compliant*
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MJE182G |
ON Semiconductor |
Transistors Bipolar (BJT) 3A 80V 12.5W NPN |
Data Sheet |
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Pricing (USD) |
Quantity | ||||||||||||
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Data Sheet |
Negotiable |
|
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