(China (Mainland))
Product Summary
The STP11NM60FD is a high-performance FDmesh? Power MOSFET (with fast diode)
Parametrics
STP11NM60FD Parametrics:
Packaging
Tube
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Rds On (Max) @ Id, Vgs
450 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Gate Charge (Qg) @ Vgs
40nC @ 10V
Input Capacitance (Ciss) @ Vds
900pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Features
STP11NM60FD Features:
- 100% avalanche tested
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- Low gate input resistance
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 STP11NM60FD |
STMicroelectronics |
MOSFET N-Ch 600 Volt 11 Amp |
Data Sheet |
Negotiable |
|
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|
STP11NM60FDFP |
STMicroelectronics |
MOSFET N-Ch 600 Volt 11 Amp |
Data Sheet |
Negotiable |
|
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