(China (Mainland))
Product Summary
The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the ST
Company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt
and excellent avalanche characteristics. The adoption of the ST Company’s proprietary strip technique yields overall dynamic
performance that is significantly better than that of similar competition’s products.
Parametrics
STP12NM50 Parametrics:
Packaging
Tube
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Rds On (Max) @ Id, Vgs
350 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
5V @ 50μA
Gate Charge (Qg) @ Vgs
39nC @ 10V
Input Capacitance (Ciss) @ Vds
1000pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package/Case
TO-220-3
Supplier Device Package
TO-220AB
Other Names
497-2666-5
Features
STP12NM50 Features:
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
100% avalanche tested
Low gate input resistance
Tight process control and high manufacturing yields
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 STP12NM50 |
STMicroelectronics |
MOSFET N-Ch 500 Volt 12 Amp |
Data Sheet |
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|
STP12NM50FD |
STMicroelectronics |
MOSFET N-Ch 500 Volt 12 Amp |
Data Sheet |
Negotiable |
|
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|
STP12NM50FP |
STMicroelectronics |
MOSFET N-Ch 500 Volt 12 Amp |
Data Sheet |
|
|
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|
STP12NM50N |
STMicroelectronics |
MOSFET N-Ch 550 V 0.30 Ohm 12 A MDmesh |
Data Sheet |
Negotiable |
|
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|
STP12NM50FDFP |
STMicroelectronics |
MOSFET N-Ch 500 Volt 12 Amp |
Data Sheet |
Negotiable |
|
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