(China (Mainland))
Product Summary
The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with
the ST Company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance,
impressively high dv/dt and excellent avalanche characteristics. The adoption of the ST Company’s proprietary
strip technique yields overall dynamic performance that is significantly better than that of similar competition’s
products.
Parametrics
STW26NM60 Parametrics:
| Packaging | Tube |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 135 mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Gate Charge (Qg) @ Vgs | 102nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2900pF @ 25V |
| Power - Max | 313W |
| Mounting Type | Through Hole |
| Package/Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Other Names | 497-3265-5 |
Features
STW26NM60 Features:
- TYPICAL RDS(on) = 0.125 Ω
- HIGH dv/dt AND AVALANCHE CAPABILITIES
- IMPROVED ESD CAPABILITY
- LOW INPUT CAPACITANCE AND GATE CHARGE
- LOW GATE INPUT RESISTANCE
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 STW26NM60 |
STMicroelectronics |
MOSFET N-Ch 600 Volt 30 Amp |
Data Sheet |
Negotiable |
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|
STW26NM60N |
STMicroelectronics |
MOSFET N-channel 600 V Mdmesh II Power |
Data Sheet |
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