Product Summary
The BSM20GP60 is an IGBT module.
Parametrics
BSM20GP60 absolute maximum ratings: (1)repetitive peak reverse voltage:1600V; (2)RMS forward current per chip:40A; (3)DC forward current:20A; (4)surge forward current:230A; (5)I2t - value:260A2S; (6)collector-emitter voltage:600V; (7)DC-collector current: 35A; (8)repetitive peak collector current:40A; (9)total power dissipation:130W; (10)gate-emitter peak voltage:±20V.
Features
BSM20GP60 features: (1)forward voltage:1V to 1.05V; (2)threshold voltage:0.8V; (3)slope resistance:10.5mΩ; (4)reverse current:2mA; (5)lead resistance, terminals-chip:8mΩ; (6)collector-emitter saturation voltage:2.2V; (7)gate threshold voltage:4.5V to 6.5V; (8)input capacitance:1.1nF; (9)collector-emitter cut-off current:1.0mA; (10)gate-emitter leakage current:300nA; (11)turn on delay time (inductive load):50ns; (12)rise time (inductive load):50ns; (13)turn off delay time (inductive load):270ns; (14)fall time (inductive load):40ns; (15)turn-on energy loss per pulse:0.9mWs; (16)turn-off energy loss per pulse:0.7mWs.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM20GP60 |
Infineon Technologies |
IGBT Modules 600V 20A PIM |
Data Sheet |
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BSM200GA120D |
Other |
Data Sheet |
Negotiable |
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BSM200GA120DLC |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DLCS |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2 |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2C |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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