Product Summary
The FDC5614P is a 60V P-Channel MOSFET. It uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. The applications of the FDC5614P are DC-DC converters, load switch, power management.
Parametrics
FDC5614P absolute maximum ratings: (1)Drain-Source Voltage:–60V; (2)Gate-Source Voltage:±20V; (3)Drain Current:Continuous:–3A, Pulsed:–20A; (4)Maximum Power Dissipation:1.6W, 0.8W; (5)Operating and Storage Junction Temperature Range:–55 to +150℃.
Features
FDC5614P features: (1)–3 A, –60 V. RDS(ON)=0.105Ω @ VGS=–10 V, RDS(ON)=0.135Ω @ VGS=–4.5 V ; (2)Fast switching speed; (3)High performance trench technology for extremely low RDS(ON).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FDC5614P |
Fairchild Semiconductor |
MOSFET SSOT-6 P-CH |
Data Sheet |
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FDC5614P_D87Z |
Fairchild Semiconductor |
MOSFET 60V P-Ch Logic Lev PowerTrench MOS |
Data Sheet |
Negotiable |
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