(China (Mainland))
Product Summary
The FQPF12N60C is a N-Channel enhancement mode power field effect transistor. It adopts Fairchild’s proprietary, planar stripe, DMOS technology. Its package is TO220F.
Parametrics
Absolute maximum ratings: (1)VGSS, Gate-Source Voltage: ± 30 V; (2)EAS, Single Pulsed Avalanche Energy: 870 mJ; (3)IAR, Avalanche Current: 12 A; (4)EAR, Repetitive Avalanche Energy: 22.5 mJ; (5)dv/dt, Peak Diode Recovery dv/dt: 4.5 V/ns; (6)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150 ℃.
Features
Features: (1)12A, 600V, RDS(on) = 0.65Ω@VGS = 10 V; (2)Low gate charge ( typical 48 nC); (3)Low Crss ( typical 21 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FQPF12N60C |
Fairchild Semiconductor |
MOSFET 600V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
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FQPF12N60CT |
Fairchild Semiconductor |
MOSFET N-CH/600V/12A QFET C-Series |
Data Sheet |
Negotiable |
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