Product Summary

The FDS6898AZ is an N-Channel Logic Level MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDS6898AZ is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parametrics

FDS6898AZ absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 20 V; (2)VGSS, Gate-Source Voltage: ± 12 V; (3)ID, Drain Current – Continuous: 9.4 A; pulsed: 38A; (4)Power Dissipation, PD: 0.9W; (5)TJ, TSTG, Operating and Storage Junction Temperature Range: –55 to +150℃.

Features

FDS6898AZ features: (1)9.4 A, 20 V RDS(ON) = 14 mW @ VGS = 4.5 V; RDS(ON) = 18 mW @ VGS = 2.5 V; (2)Low gate charge (16 nC typical); (3)ESD protection diode; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.

Diagrams

FDS6898AZ pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDS6898AZ
FDS6898AZ
Fairchild Semiconductor
MOSFET SO-8
Data Sheet
0-1: $0.73
1-25: $0.65
25-100: $0.52
100-250: $0.45
FDS6898AZ_F085
FDS6898AZ_F085
Fairchild Semiconductor
MOSFET N-CHANNEL MOSFET
Data Sheet
0-1730: $0.54
1730-2500: $0.50
2500-5000: $0.48
5000-10000: $0.47