(China (Mainland))
Product Summary
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench ? process that has been tailored
to minimize the on-state resistance while maintaining superior switching performance.
Parametrics
FDP090N10 Parametrics:
Packaging
Tube
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Rds On (Max) @ Id, Vgs
9 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Gate Charge (Qg) @ Vgs
116nC @ 10V
Input Capacitance (Ciss) @ Vds
8225pF @ 25V
Power - Max
208W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Dynamic Catalog
N-Channel Standard FETs
Features
FDP090N10 Features:
? RDS(on) = 7.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
? Fast Switching Speed
? Low Gate Charge
? High Performance Trench Technology for Extremely Low RDS(on)
? High Power and Current Handling Capability
? RoHS Compliant
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDP090N10 |
Fairchild Semiconductor |
MOSFET 100V 75A N-Chan PowerTrench |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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MOSFET N-CH 60V 120A TO-220-3 |
Data Sheet |
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FDP020N06B_F102 |
Fairchild Semiconductor |
MOSFET N-Channel PwrTrench 60V 313A 2mOhm |
Data Sheet |
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FDP025N06 |
Fairchild Semiconductor |
MOSFET 60V N-Channel PowerTrench |
Data Sheet |
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FDP027N08B |
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MOSFET N-CH 80V 223A TO-220-3 |
Data Sheet |
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FDP027N08B_F102 |
Fairchild Semiconductor |
MOSFET N-Channel PwrTrench 80V 223A 2.7mOhm |
Data Sheet |
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FDP030N06 |
Fairchild Semiconductor |
MOSFET NCH 60V 3.0Mohm |
Data Sheet |
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