(China (Mainland))
Product Summary
The IRF730PBF is a high performance Third generation Power MOSFETs of Vishay Siliconix .
Parametrics
IRF730PBF Parametrics:
Packaging
Tube
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
400V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Rds On (Max) @ Id, Vgs
1 Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Gate Charge (Qg) @ Vgs
38nC @ 10V
Input Capacitance (Ciss) @ Vds
700pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Dynamic Catalog
N-Channel Standard FETs
Other Names
*IRF730PBF
Features
IRF730PBF Features:
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF730PBF |
Vishay/Siliconix |
MOSFET N-Chan 400V 5.5 Amp |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
IRF710 |
Vishay/Siliconix |
MOSFET N-Chan 400V 2.0 Amp |
Data Sheet |
|
|
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 |
IRF710, SiHF710 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IRF710_R4943 |
Fairchild Semiconductor |
MOSFET TO-220AB |
Data Sheet |
Negotiable |
|
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IRF7101 |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
Data Sheet |
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IRF7101PBF |
International Rectifier |
MOSFET |
Data Sheet |
|
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IRF7101TR |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
Data Sheet |
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