Product Summary

The TK10A60D is durable Toshiba MOSFETs,which is easy to parallel connection.The TK10A60D is high efficient ,and it is

through strict quality test.

Parametrics

TK10A60D Parametrics:


  • FET Type: MOSFET N-Channel, Metal Oxide
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25° C: 10A (Ta)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 1350pF @ 25V
  • Power - Max: 45W
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220SIS


Features

TK10A60D Features:


  • No carrier storage effect; superior frequency and switching characteristics
  • Rugged and no current concentration
  • Voltage-controlled device, hence low drive power
  • Easy parallel connection
  • Guaranteed avalanche capability
  • Improved functioning of built-in diodes
  • High ruggedness
  • High-speed switching
  • Low R(DS)ON
  • Smaller packages
  • Low drive loss



Diagrams

Unit: mm



Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
TK10A60D(Q,M)
TK10A60D(Q,M)

MOSFET N-CH 600V 10A TO220SIS
Data Sheet
0-150: $1.30
TK10A60D(STA4,Q,M)
TK10A60D(STA4,Q,M)
Toshiba
MOSFET MOSFET N-ch 600V 10A
Data Sheet
0-1: $0.96
1-10: $0.77
10-100: $0.64
100-250: $0.54