Product Summary
This Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low
on-resistance per silicon area.
Parametrics
IRFP2907PBF Parametrics:
Packaging
Bulk
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
75V
Current - Continuous Drain (Id) @ 25°C
209A (Tc)
Rds On (Max) @ Id, Vgs
4.5 mOhm @ 125A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Gate Charge (Qg) @ Vgs
620nC @ 10V
Input Capacitance (Ciss) @ Vds
13000pF @ 25V
Power - Max
470W
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247AC
Dynamic Catalog
N-Channel Standard FETs
Other Names
*IRFP2907PBF
Features
IRFP2907PBF Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRFP2907PBF |
International Rectifier |
MOSFET |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRFP044N |
MOSFET N-CH 55V 53A TO-247AC |
Data Sheet |
Negotiable |
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IRFP054, SiHFP054 |
Other |
Data Sheet |
Negotiable |
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IRFP21N60LPBF |
Vishay/Siliconix |
MOSFET N-Chan 600V 21 Amp |
Data Sheet |
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IRFP23N50L |
Vishay/Siliconix |
MOSFET N-Chan 500V 23 Amp |
Data Sheet |
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IRFP150, SiHFP150 |
Other |
Data Sheet |
Negotiable |
|
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IRFP150V |
Other |
Data Sheet |
Negotiable |
|