(China (Mainland))
Product Summary
The NTMD4820NR2G is a high-performance Power MOSFET.
Parametrics
NTMD4820NR2G Parametrics:
Packaging
Tape & Reel (TR)
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
4.9A
Rds On (Max) @ Id, Vgs
20 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Gate Charge (Qg) @ Vgs
7.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds
940pF @ 15V
Power - Max
750mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N
Dynamic Catalog
N-Channel Logic Level Gate FETs
Other Names
NTMD4820NR2G-ND
NTMD4820NR2GOSTR
Features
NTMD4820NR2G Features:
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Dual SOIC?8 Surface Mount Package Saves Board Space
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 NTMD4820NR2G |
ON Semiconductor |
MOSFET NFET SO8 30V 8A TR 0.020R |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
NTMD2C02R2SG |
ON Semiconductor |
MOSFET COMP20V 2A .043R TR |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTMD2P01R2 |
ON Semiconductor |
MOSFET -16V 2.3A Dual |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTMD2P01R2G |
ON Semiconductor |
MOSFET -16V 2.3A Dual P-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTMD3N08LR2 |
ON Semiconductor |
MOSFET 80V 2.3A N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTMD3P03R2 |
ON Semiconductor |
MOSFET 30V 3.05A P-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTMD3P03R2G |
ON Semiconductor |
MOSFET 30V 3.05A P-Channel |
Data Sheet |
|
|
||||||||||||
