(China (Mainland))
Product Summary
The SI2301CDS-T1-E3 is a high-performance MOSFET.
Parametrics
SI2301CDS-T1-E3 Parametrics:
Packaging
Tape & Reel (TR)
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta), 3.1A (Tc)
Rds On (Max) @ Id, Vgs
112 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Gate Charge (Qg) @ Vgs
10nC @ 4.5V
Input Capacitance (Ciss) @ Vds
405pF @ 10V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Dynamic Catalog
P-Channel Standard FETs
Other Names
SI2301CDS-T1-E3-ND
SI2301CDS-T1-E3TR
SI2301CDST1E3
Features
SI2301CDS-T1-E3 Features:
?Halogen-free Option Available
?TrenchFET? Power MOSFET
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 Si2301CDS-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 3.1A 1.6W 112mohm @ 4.5V |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
Si2301CDS |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
Si2301CDS-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 3.1A 1.6W 112mohm @ 4.5V |
Data Sheet |
|
|
||||||||||||
|
Si2301DS |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
SI2309DS-T1-GE3 |
Vishay/Siliconix |
MOSFET 60V 1.25A 1.25W 340mohm @ 10V |
Data Sheet |
Negotiable |
|
||||||||||||
|
SI2331DS-T1-GE3 |
Vishay/Siliconix |
MOSFET 12V 3.6A 0.89W 48mohm @ 4.5V |
Data Sheet |
Negotiable |
|
||||||||||||
|
SI2320DS-T1 |
Vishay/Siliconix |
MOSFET 200V 0.22A |
Data Sheet |
Negotiable |
|
||||||||||||
