(China (Mainland))
Product Summary
The 2SK3868 is a high-performance TOSHIBA Field Effect Transistor.
Parametrics
2SK3868 Parametrics:
Packaging
Bulk
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Rds On (Max) @ Id, Vgs
1.7 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
16nC @ 10V
Input Capacitance (Ciss) @ Vds
550pF @ 25V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220SIS
Features
2SK3868 Features:
? Low drain-source ON resistance: RDS (ON)= 1.3 Ω (typ.)
? High forward transfer admittance: |Yfs| = 3 S (typ.)
? Low leakage current: IDSS = 100 μA (VDS = 500 V)
? Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 2SK3868 |
Other |
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Data Sheet |
Negotiable |
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2SK3868(Q,M) |
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MOSFET N-CH 500V 5A TO220SIS |
Data Sheet |
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