(China (Mainland))
Product Summary
The 2SJ438 is a silicon P channel MOS type field effect ransistor. The device is suitable for high speed, high current switching appplications, DC-DC converter, relay drive and motor drive applications.
Parametrics
2SJ438 absolute maximum ratings: (1)drain-source voltage, VDSS: -60V; (2)draion-gate voltage (RGS=20KΩ), VDGR: -60V; (3)gate-source voltage, VGS: ±20V; (4)drain current, DC, ID: -5A; pulse, IDP: -20A; (5)drain power dissipation (Tc=25℃), PD: 25W; (6)single pulse avalanche energy, EAS: 273mJ; (7)avalanche current, IAR: -5A; (8)repetitive avalanche energy, EAR: 2mJ; (9)channel temperature, Tch: 150℃; (10)storage temperature range, Tstg: -55 to 150℃.
Features
2SJ438 features: (1)4V gate drive; (2)low drain-source on resistance: RDS(ON)=0.16Ω typ; (3)high forward transfer admittance: |Yfs|=4.0S typ; (4)low leakage current: IDSS=-100μA max (VDS=-60V); (5)enhancement-mode: Vth=-0.8 to 2.0V (VDS=-10V, ID=-1mA).
Diagrams
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 2SJ400 |
Other |
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Data Sheet |
Negotiable |
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2SJ401 |
Other |
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Data Sheet |
Negotiable |
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2SJ401(Q) |
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MOSFET P-CH 60V 20A TO-220FL |
Data Sheet |
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2SJ401(TE24L,Q) |
Toshiba |
MOSFET MOSFET P-Ch 60V 20A Rdson=0.045Ohm |
Data Sheet |
Negotiable |
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2SJ402(Q) |
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MOSFET P-CH 60V 30A TO-220FL |
Data Sheet |
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2SJ403 |
Other |
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Data Sheet |
Negotiable |
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