(China (Mainland))
Product Summary
The BF820W is a NPN high-voltage transistor. It is suitable for telephony and professional communication equipment. Its package is SOT323.
Parametrics
Absolute maximum ratings: (1)VEBO, emitter-base voltage: - 5 V; (2)IC, collector current (DC): - 50 mA; (3)ICM, peak collector current: - 100 mA; (4)IBM, peak base current: - 50 mA; (5)Tstg, storage temperature: -65 +150℃; (6)Tj, junction temperature: - 150℃; (7)Tamb, operating ambient temperature: -65 +150℃.
Features
Features: (1)Low current (max. 50 mA); (2)High voltage (max. 300 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BF820W |
Other |
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Data Sheet |
Negotiable |
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BF820W /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS HV TAPE-11 |
Data Sheet |
Negotiable |
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BF820W,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS HV TAPE-7 |
Data Sheet |
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BF820W,135 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS HV TAPE-11 |
Data Sheet |
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BF820W T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS HV TAPE-7 |
Data Sheet |
Negotiable |
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