(China (Mainland))
Product Summary
The MJD122T4G is a Complementary Darlington Power Transistor. It is designed for general purpose amplifier and low speed switching applications.
Parametrics
MJD122T4G absolute maximum ratings: (1)Collector-Emitter Voltage:100 Vdc; (2)Collector-Base Voltage:100 Vdc; (3)Emitter-Base Voltage:5 Vdc; (4)Collector Current:Continuous:8Adc, Peak:16Adc; (5)Base Current:120 mAdc; (6)Operating and Storage Junction Temperature Range:-65 to +150℃.
Features
MJD122T4G features: (1)Lead Formed for Surface Mount Applications in Plastic Sleeves; (2)Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series; (3)Monolithic Construction With Built-in Base-Emitter Shunt Resistors; (4)High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc; (5)Epoxy Meets UL 94 V-0 @ 0.125 in; (6)ESD Ratings: Human Body Model, 3B ＞ 8000 V, Machine Model, C ＞400 V; (7)Pb-Free Packages are Available.
Diagrams
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 MJD122T4G |
ON Semiconductor |
Transistors Darlington 8A 100V Bipolar Power NPN |
Data Sheet |
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MJD112-1G |
ON Semiconductor |
Transistors Darlington 2A 100V Bipolar Power NPN |
Data Sheet |
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MJD112G |
ON Semiconductor |
Transistors Darlington 2A 100V Bipolar Power NPN |
Data Sheet |
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MJD112RL |
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Transistors Darlington 2A 100V Bipolar |
Data Sheet |
Negotiable |
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MJD112RLG |
ON Semiconductor |
Transistors Darlington 2A 100V Bipolar Power NPN |
Data Sheet |
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MJD112T4 |
STMicroelectronics |
Transistors Darlington NPN Power Darlington |
Data Sheet |
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MJD112TF |
Fairchild Semiconductor |
Transistors Darlington NPN Si Transistor Darlington |
Data Sheet |
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