Product Summary
The DG611DJ features high-speed low capacitance lateral DMOS switches. Charge injection has been minimized to optimize
performance in fast sample-andhold applications.
Parametrics
DG611DJ Parametrics:
| Packaging | Tube |
|---|---|
| Function | Switch |
| Circuit | 4 x SPST - NC |
| On-State Resistance | 45 Ohm |
| Voltage Supply Source | Single, Dual Supply |
| Voltage - Supply, Single/Dual (±) | 10 V ~ 18 V, ±10 V ~ 15 V |
| Current - Supply | 1μA |
| Operating Temperature | -40°C ~ 85°C |
| Mounting Type | Through Hole |
| Package/Case | 16-DIP (0.300", 7.62mm) |
| Supplier Device Package | 16-PDIP |
Features
DG611DJ Features:
- Fast switching - tON: 12 ns
- Low charge injection: ± 2 pC
- Wide bandwidth: 500 MHz
- 5 V CMOS logic compatible
- Low RDS(on): 18 Ω
- Low quiescent power : 1.2 nW
- Single supply operation
Diagrams



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![]() DG611DJ |
![]() Vishay/Siliconix |
![]() Analog Switch ICs High-Speed Switch |
![]() Data Sheet |
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![]() DG611DJ-E3 |
![]() Vishay/Siliconix |
![]() Analog Switch ICs High-Speed Switch |
![]() Data Sheet |
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(China (Mainland))










